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| SUM110N04-05H Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) () 0.0053 at VGS = 10 V ID (A) 110 Qg (Typ.) 95 FEATURES * TrenchFET(R) Power MOSFET * 175 C Junction Temperature * High Threshold Voltage at High Temperature RoHS COMPLIANT D TO-263 G G DS S N-Channel MOSFET Top View Ordering Information: SUM110N04-05H-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy a Symbol VDS VGS TC = 25 C TC = 125 C ID IDM IAR L = 0.1 mH TC = 25 C TA = 25 Cc EAR PD TJ, Tstg Limit 40 20 110 70 300 50 125 150b 3.75 - 55 to 175 Unit V A mJ W C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). PCB Mountc Symbol RthJA RthJC Limit 40 1 Unit C/W Document Number: 73131 S-80274-Rev. B, 11-Feb-08 www.vishay.com 1 SUM110N04-05H Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg c Test Conditions VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 40 V, VGS = 0 V VDS = 40 V, VGS = 0 V, TJ = 125 C VDS = 40 V, VGS = 0 V, TJ = 175 C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125 C VGS = 10 V, ID = 30 A, TJ = 175 C VDS = 15 V, ID = 15 A Min. 40 3.4 Typ. Max. Unit 3.8 5.0 100 1 50 250 V nA A A 120 0.0044 0.0053 0.008 0.0106 20 50 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Timec Turn-Off Delay Time Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time c c 6700 VGS = 0 V, VDS = 25 V, f = 1 MHz 600 320 95 VDS = 20 V, VGS = 10 V, ID = 50 A f = 1.0 MHz VDD = 20 V, RL = 0.4 ID 50 A, VGEN = 10 V, Rg = 2.5 37 21 1.7 20 95 50 12 30 145 75 20 100 300 IF = 30 A, VGS = 0 V IF = 30 A, di/dt = 100 A/s 0.90 40 1.50 60 ns nC pF td(on) tr td(off) tf IS ISM VSD trr Source-Drain Diode Ratings and Characteristics TC = 25 Cb A V ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73131 S-80274-Rev. B, 11-Feb-08 SUM110N04-05H Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 250 VGS = 10 thru 8 V 200 I D - Drain Current (A) I D - Drain Current (A) 7V 150 200 250 150 100 6V 50 5V 0 0 2 4 6 8 10 100 TC = 125 C 50 25 C - 55 C 0 0 1 2 3 4 5 6 7 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 160 TC = - 55 C 140 g fs - Transconductance (S) 120 125 C 100 80 60 40 20 0 0 10 20 30 40 50 60 0.000 0 25 C r DS(on) - On-Resistance () 0.008 0.010 Transfer Characteristics 0.006 VGS = 10 V 0.004 0.002 20 40 60 80 100 I D - Drain Current (A) I D - Drain Current (A) Transconductance 8400 Ciss VGS - Gate-to-Source Voltage (V) 16 6300 C - Capacitance (pF) 20 On-Resistance vs. Drain Current VDS = 20 V ID = 50 A 12 4200 8 2100 Coss Crss 0 0 5 10 15 20 25 30 35 40 4 0 0 40 80 120 160 200 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 73131 S-80274-Rev. B, 11-Feb-08 Gate Charge www.vishay.com 3 SUM110N04-05H Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.0 VGS = 10 V ID = 30 A 1.7 I S - Source Current (A) rDS(on) - On-Resistance 100 (Normalized) 1.4 TJ = 150 C 10 1.1 TJ = 25 C 0.8 0.5 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 54 100 IAV (A) at TJ = 25 C 10 V(BR)DSS (V) 51 ID = 1 mA I Dav (A) 48 1 IAV (A) at TJ = 150 C 45 0.1 0.00001 0.0001 0.001 0.01 tin (s) 0.1 1 42 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature www.vishay.com 4 Document Number: 73131 S-80274-Rev. B, 11-Feb-08 SUM110N04-05H Vishay Siliconix THERMAL RATINGS 125 1000 10 s 100 I D - Drain Current (A) I D - Drain Current (A) 100 100 s Limited by rDS(on)* 1 ms 10 ms, 100 ms, DC 10 75 1 0.1 TC = 25 C Single Pulse 50 25 0.01 0 0 25 50 75 100 125 150 175 0.001 0.1 * VGS 1 10 100 TA - Ambient Temperature (C) Maximum Avalanche and Drain Current vs. Case Temperature VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73131. Document Number: 73131 S-80274-Rev. B, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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